power transistors www.jmnic.com 2sC3691 silicon npn transistors features b c e ?q with to-220fa package ?q high speed ,power swit ching applications absolute maximum ratings tc=25 ?? symbol parameter rating unit v cbo collector to base voltage 100 v v ceo collector to emitter voltage 60 v v ebo emitter to base voltage 5 v i c collector current 5 a p c collector power dissipation 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? to-220fa electrical characteristics tc=25 ?? symbol parameter conditions min typ. max unit i cbo collector cut-off current v cb =60v; i e =0 10 ua i ebo emitter cut-off current v eb =5v; i c =0 10 ua i ceo collector cut-off current v cbo collector-base breakdown voltage v ceo(sus) collector-emitter sustaining voltage i c =30ma; i b =0 60 v v ebo emitter-base breakdown voltage v ce(sat-1) collector-emitter saturation voltages i c =4a; i b =0.2a 0.5 v v ce(sat-2) collector-emitter saturation voltages h fe-1 forward current transfer ratio i c =1a; v ce =2v 100 400 h fe-2 forward current transfer ratio v be(sat)1 base-emitter saturation voltages i c =4a; i b =0.2a 1.5 v v be(sat)2 base-emitter saturation voltages f t transition frepuency i c =0.5a; v ce =10v 150 mhz c ob collector out put capacitance i c =0, v cb =10v f=1mhz 70 pf jmn ic
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